SCIPP Silicon Strip Detectors – BS Research

I characterized silicon strip detectors under annealing and variable radiation dosages in-between classes at the Santa Cruz Institute for Particle Physics (SCIPP). My research contributed to a publication paper in the NIM:A research journal. I also staffed at the 2006 Hiroshima Symposium on the Development and Application of Semiconductor Tracking Detectors, in Carmel CA.

Capacitance–voltage (C–V) characteristics of a MOS capacitor fabricated on a p-type MCz wafer with high-dose p-spray, both pre-rad and after a total dose of 210 krad of 60Co gammas. The flatband voltage increases from about 3 V pre-rad to about 65 V after a total dose of 210 krad. The hysteresis between data taken with increasing (filled symbols) and decreasing (un-filled symbols) voltage is seen.
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